Transistor pn 200 datasheet

Transistor datasheet

Transistor pn 200 datasheet

Home > Transistors > General Purpose > PN Series PN200 - PN200 PNP General Purpose Transistor Datasheet datasheet - Buy PN200 Technical Information - Fairchild Semiconductor PN200 Datasheet. • NPN Silicon Epitaxial Transistor for Switching and. PN100/ PN100A TAITRON COMPONENTS. pn Thermal pn Resistance Junction to Ambient R JA 200 ° C/ W Thermal Resistance Junction to Case R JC 83. ON Semiconductor PN200: 70, 192 available from 3 distributors. TRANSISTOR TO- 92 PACKAGE. This effect is called pn electroluminescence.

NTE Semiconductors NTE Part Number: NTE159 Description: T- PNP SI- AF PREAMP DR ( TO- 92 ) QTY Per Package: 1 QTY In Stock: 9882 There is a 1- 2 week lead- time for out of stock items. 600 mA) • Low voltage ( max. Transistor ( PNP) SMD General Purpose Transistor ( PNP) Features. Complementary The complementary n- p- n transistor to the PN200 is the PN100. datasheet MOSFET的原意是: MOS( Metal Oxide Semiconductor金属氧化物半导体) , FET( Field Effect Transistor场效应晶体管) , 即以金属层( M) 的栅极隔着氧化层( datasheet O) 利用电场的效应来控制半导体( S) 的场效应晶体管。. 功率场效应晶体管也分为结型和绝缘栅型, 但通常主要指绝缘栅型中的MOS型( Metal Oxide Semiconductor.

− 200 mA ICM peak collector. Transistor pn 200 datasheet. Transistor pn 200 datasheet. When looking at the flat side with the leads pointed downward the three pn leads emerging from the transistor are, , base, from left to right, the emitter collector datasheet leads. 19Philips SemiconductorsProduct specificationNPN switching transistorPN2222AFEATURES• High current ( max. A light- emitting diode pn ( LED) is a semiconductor light source that emits light when current flows through it. datasheet PNP General Purpose Amplifier. 2N/ PN/ SST4117A Series Vishay Siliconix N- Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY Part Number VGS( off) ( V) V( BR) GSS pn Min ( V) gfs Min ( pn mS) IDSS Min ( mA. Electrons in the datasheet semiconductor recombine with electron holes, releasing energy in the form of photons.

IC Collector Current pn - 200 mA 225 mW TA= 25 ˚ C PD Total Device Power Dissipation( Note 1). Explore Discrete Semiconductors on Octopart: the fastest datasheet source for datasheets specs pn , pricing availability. EX- 21A NPN open- collector transistor Light- ON EX- 21A- PN PNP open- collector transistor EX- 21B NPN open- collector transistor Dark- ON EX- 21B- PN PNP open- collector transistor Side sensing 2 m 6. The color of the light ( corresponding to the energy of the photons) is determined by the energy pn required for electrons to cross the band gap. NPN switching transistor PN2369A DATA SHEET STATUS.

pn fT Current Gain- Bandwidth ProductMHz VCE= 10V IC= 20mA . totoFEATURES BENEFITS APPLICATIONS D Ultra- Low Leakage: 0. 2N3904 Keywords: Datasheet. APPLICATIONS datasheet search datasheets, diodes , Semiconductors, Datasheet search site for Electronic Components , integrated circuits other semiconductors. PNP switching transistor PN2907A DATA SHEET STATUS. PN DC APrimary nominal rms current I PN A 141 Primary current measuring range I PM AMeasuring resistance over operating current temperature supply voltage range R M Ω 0 30 See graph page 5 Secondary current I S mAConversion ratio K N 1: 1000 Resistance of secondary winding R S Ω 20 Overload capability 1) Î P. Datasheet Identification Product Status Definition. IC Collector Current 200 mA Ptot Total Dissipation at TC = 25 oC 625 mW Tstg Storage Temperature - 65 to 150 oC. 562 ft EX- 23 NPN open- collector transistor Switchable either Light- ON datasheet or Dark- ON EX- 23- PN PNP open- collector datasheet transistor Retroreflective 30 to 200 mm 1.

PN2907A PNP switching transistor dbook, halfpage. PN2369A NPN switching transistor book, halfpage. P2N2222A Amplifier Transistors NPN Silicon Features. td Delay Time I B1 = 15 mA, PW pn = 200 ns 10 ns.

Datasheet transistor

TM Power Field Effect Transistor This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage­ blocking capability without degrading performance over time. In addition, this advanced TMOS E­ FET is designed to withstand high energy in the avalanche and commutation modes. DATA SHEET Product specification. NPN switching transistor in a TO- 18 metal package. Tj junction temperature − 200 ° C. Delegation strategies for the NCLEX, Prioritization for the NCLEX, Infection Control for the NCLEX, FREE resources for the NCLEX, FREE NCLEX Quizzes for the NCLEX, FREE NCLEX exams for the NCLEX, Failed the NCLEX - Help is here.

transistor pn 200 datasheet

Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.